| 摘要 |
A method for forming a semiconductor device is provided to guarantee a maximum area where a landing plug contact is connected to a semiconductor substrate by forming a gate polysilicon layer of an inverse trapezoidal type protruding from the semiconductor substrate wherein a polysilicon layer in a recess gate region is formed as a built-in type with a gate. A pad oxide layer and a pad material layer are formed on a semiconductor substrate(100). The pad material layer can be formed by using one of a nitride layer or a polysilicon layer. The pad material layer, the pad oxide layer and the semiconductor substrate are etched by an etch process using a gate mask to form a recess gate region(130) wherein the light width of the recess gate region becomes smaller as it goes down to the semiconductor substrate. A gate insulation layer(140) is formed on the front surface of the semiconductor substrate. The recess gate region is filled with a gate polysilicon layer(150). The gate insulation layer formed on the pad material layer is eliminated. The pad material layer is removed, and an oxide layer is formed in a region from which the pad material layer is removed. A gate conductive layer and a hard mask layer are sequentially formed on the resultant structure. The hard mask layer and the gate conductive layer are etched by a photolithography process using the gate mask, and the oxide layer is removed to form a recess gate.
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