| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a pattern defect at a wafer edge section by exposing the wafer edge section with a blank reticle except for a field region to perform a EBR(Edge Bead Removal) process on the wafer edge section. A photoresist layer(21) is formed on a wafer. A field region(23) and the photoresist layer of a wafer edge section except for the field region are exposed and developed with a reticle having a pattern and a blank reticle. The photoresist layer is a positive-type photoresist layer for KrF, ArF, and I-line. One of a BIM(Binary Intensity Mask), an attenuated PSM(Phase Shift Mask), and an alternating PSM is used as the blank reticle. One of KrF, ArF, and I-line is used as a light source in an exposure process. One of conventional, annular, crosspole, quadrupole, and a combination thereof is used as an exposure lighting system.
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