发明名称 Electro-optical device and electronic device
摘要 An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure. which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value. <IMAGE>
申请公布号 EP1770779(A3) 申请公布日期 2007.07.04
申请号 EP20060026640 申请日期 2000.06.02
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;KOYAMA, JUN;YAMAMOTO, KUNITAKA;KONUMA, TOSHIMITSU
分类号 H01L51/52;H01L21/77;H01L27/12;H01L27/32;H01L29/423;H01L29/786;H05B33/04 主分类号 H01L51/52
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