发明名称 |
Electro-optical device and electronic device |
摘要 |
An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure. which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value. <IMAGE> |
申请公布号 |
EP1770779(A3) |
申请公布日期 |
2007.07.04 |
申请号 |
EP20060026640 |
申请日期 |
2000.06.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;KOYAMA, JUN;YAMAMOTO, KUNITAKA;KONUMA, TOSHIMITSU |
分类号 |
H01L51/52;H01L21/77;H01L27/12;H01L27/32;H01L29/423;H01L29/786;H05B33/04 |
主分类号 |
H01L51/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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