| 摘要 |
A CMP using HF vaporizing is provided to improve a wafer surface roughness and a defect removal ratio through slight-etching by changing a post cleaning process into a post etching process using HF gas and a VPC(Vapor Process Chamber). A CMP apparatus includes left and right polishing units(51,51'), a pair of turn-over(52,52'), a rotary transporter(53), left and right VPCs(Vapor Process Chamber)(61,61'), left and right robots(55,55'), left and right DTC(62,62'), a water station(57), a robot dry(58) and a load/unload units(59). DIW, N2, vacuum and air are supplied into the CMP apparatus respectively. A post etching using a HF vaporizing is performed for improving surface roughness of a wafer and removing a film defect caused by a slight-etching.
|
