| 摘要 |
A method for forming an STI layer in a semiconductor device is provided to prevent the generation of voids by enhancing a gap-fill capability of oxide using an addition reaction. An isolation structure is formed by etching selectively a nitride layer, a pad oxide layer and a substrate and a thermal oxide layer is formed thereon(S110). An intermediate product is formed by performing an addition reaction on the thermal oxide layer(S120). A gap-fill oxide layer is formed on the resultant structure by filling the isolation structure(S130). A cleaning process is performed on the resultant structure. An annealing process is performed on the resultant structure to stabilize the gap-fill oxide layer(S140). The gap-fill oxide layer is planarized(S160). The nitride layer is removed from the resultant structure by a wet etching process(S170).
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