METHOD OF MANUFACTURING A FLASH MEMORY DEVICE

摘要

A method for manufacturing a flash memory device is provided to minimize the interference between adjacent cells by forming a floating gate without an SA-STI(Self Aligned-Shallow Trench Isolation) using one conductive layer and securing the interval between the cells enough. A floating gate pattern is formed within a first region of a semiconductor substrate(11) by depositing a tunnel oxide layer(12) and a first conductive layer(13). A trench type isolation layer(16A) is formed within a second region of the substrate. The isolation layer is partially etched. A floating gate and a control gate are formed on the resultant structure by forming sequentially a dielectric film(17) and a second conductive layer(18) on the entire surface of the resultant structure and performing a patterning process.