发明名称 Imaging with gate controlled charge storage
摘要 A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.
申请公布号 US7238544(B2) 申请公布日期 2007.07.03
申请号 US20040876514 申请日期 2004.06.28
申请人 MICRON TECHNOLOGY, INC. 发明人 HONG SUNGKWON C.
分类号 H01L21/00;H01L27/146;H01L27/148 主分类号 H01L21/00
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