| 摘要 |
A semiconductor memory device and its fabricating method are provided to improve the device performance by diagonally forming bitlines and stack capacitors. A substrate is provided with recessed gates and deep trench capacitor devices, in which protrusions(120) of the recessed gates and upper portions(104) of the deep trench capacitor devices are revealed. Spacers(124) are formed on sidewalls of the upper portions and the protrusions. Buried portions(134a,134b) of conductive material are formed in spaces between the spacers. The substrate, the spacers and the buried portions are patterned to form parallel shallow trenches(132). The shallow trenches are filled with a dielectric material, and word lines are formed across the recessed gates. Bitlines are formed to electrically connect with the buried bitline contacts. Stack capacitors are formed to electrically connect with the capacitor buried surface straps.
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