SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor device and a manufacturing method thereof are provided to improve device characteristics and to enhance the yield of products by using a dielectric film capable of enhancing mechanical intensity. A metal line(11) is formed on a semiconductor substrate. A first dielectric barrier layer(13) is formed on the metal line. An interlayer dielectric(15) is formed on the first dielectric barrier layer. A contact is connected with the metal line through the interlayer dielectric and the first dielectric barrier layer. At least one hole is formed on the interlayer dielectric. The metal line is made of Cu and the first dielectric barrier layer is made of a predetermined material with a low dielectric constant. The hole is formed between contacts.