| 摘要 |
A method for fabricating a semiconductor device is provided to prevent voids from being formed on a metal wiring and an interlayer dielectric by forming a fluorinated silicate glass layer as the interlayer dielectric. A substrate(300) with a metal wiring(310) is prepared, and then a silicon rich oxide layer(320) is formed on the substrate by plasma-enhanced chemical vapor deposition. The silicon rich oxide layer formed on an upper corner of the metal wiring is etched by supplying only Ar gas and applying RF bias power, and then a fluorinated silicate glass layer(330) is formed on the substrate through high density plasma.
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