发明名称 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
摘要 An image sensor and a method for manufacturing the same are provided to improve the sensibility of the image sensor and to simplify the manufacturing process by reducing the distance between a photodiode and a micro-lens using two passivation layers. A substrate(20) having a pixel region and a peripheral region is prepared. A top metal line(21a) is formed on the peripheral region. A first passivation layer is formed on the resultant structure to cover the top metal line for improving the step coverage between the pixel and the peripheral regions. A second passivation layer(23) having uniform thickness is then formed on the first passivation layer for removing the step between the pixel and the peripheral region.
申请公布号 KR20070069554(A) 申请公布日期 2007.07.03
申请号 KR20050131815 申请日期 2005.12.28
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 LEE, WON HO
分类号 H01L27/146 主分类号 H01L27/146
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