发明名称 |
IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
An image sensor and a method for manufacturing the same are provided to improve the sensibility of the image sensor and to simplify the manufacturing process by reducing the distance between a photodiode and a micro-lens using two passivation layers. A substrate(20) having a pixel region and a peripheral region is prepared. A top metal line(21a) is formed on the peripheral region. A first passivation layer is formed on the resultant structure to cover the top metal line for improving the step coverage between the pixel and the peripheral regions. A second passivation layer(23) having uniform thickness is then formed on the first passivation layer for removing the step between the pixel and the peripheral region.
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申请公布号 |
KR20070069554(A) |
申请公布日期 |
2007.07.03 |
申请号 |
KR20050131815 |
申请日期 |
2005.12.28 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
LEE, WON HO |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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