CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

摘要

A CMOS image sensor and its manufacturing method are provided to intercept inflow of received light into other adjacent pixel by forming a pixel isolation film around a unit pixel. Plural photodiode regions(203) are formed on a semiconductor substrate(201), and an interlayer dielectric(204) is formed on the entire surface of the substrate. A pixel isolation film(206) penetrates the interlayer dielectric and is formed around a unit pixel. A first planarized layer(207) is formed on the entire surface of the substrate, and plural color filter layers(208) are formed on the first planarized layer, and are spaced apart from each other corresponding to the photodiode regions. A second planarized layer(209) is formed on the entire surface of the substrate, and a microlens(210) is formed on the second planarized layer corresponding to each photodiode.