| 摘要 |
The present invention presents a semiconductor device ( 10 ) which is adapted to a solar cell, and in which a semiconductor element ( 1 ) is produced by forming one flat surface ( 2 ) on a spherical or substantially spherical silicon single crystal ( 1 a, 1 b). A diffusion layer ( 3 ) and a substantially spherical pn junction ( 4 ) are formed on this semiconductor element ( 1 ), and a diffusion-mask thin film ( 5 ) and a positive electrode ( 6 a) are formed on the flat surface ( 2 ). A negative electrode 6 b is formed at the apex on the opposite side to the positive electrode ( 6 a), and an antireflection film ( 7 ) is formed on the surface side of the diffusion layer ( 3 ).
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