| 摘要 |
A repair method of a photomask is provided to remove remaining defects without an additional repair process and to secure transmissivity of the photomask after repair by using an NH45OH solution. A light shielding pattern is formed on a quartz substrate. At this time, a photomask(100) is formed. A predetermined defect capable of being generated on the quartz substrate between light shielding patterns is removed from the resultant structure by using a Ga ion implantation. The photomask is treated by using an NH4OH solution. The residues of the NH4OH solution are removed from the photomask by using a rinse process. The conductivity of the NH4OH solution is in a range of 0.7 to 0.8mS.
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