METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A MOS TRANSISTOR WITH MULTIPLE CHANNELS FORMED ON A BURIED INSULATING FILM

摘要

A method for fabricating a semiconductor device having a MOS transistor is provided to minimize the generation of leakage current on a substrate by forming a buried insulation layer pattern under the lowermost channel layer. A buried insulation layer pattern and an active pattern are formed on a semiconductor substrate(1). A single crystal silicon layer is formed on a side of the first active pattern and on an upper surface of the substrate, and then is implanted with impurity to form a source/drain region(24). Sacrificial layer patterns are selectively etched to form plural tunnels on the active pattern. The tunnels are buried to a gate electrode(38) isolated from the channel layer patterns.