| 摘要 |
A method for forming a micro pattern of a semiconductor device is provided to embody easily the micro pattern by improving the resolution and process margin without the decrease of thickness of a photoresist layer using multi-step exposure processes under different focus conditions. A photoresist layer(13) is coated on a semiconductor substrate(11) and baked. A pattern forming mask is arranged on the resultant structure. A first exposure process is performed on the resultant structure. At this time, an upper side of the photoresist layer is focused. A second exposure process is performed on the resultant structure by focusing a lower side of the photoresist layer. The exposed photoresist portion or unexposed photoresist portion is performed by a developing process. A cleaning process is then performed on the resultant structure.
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