| 摘要 |
A method for testing a sensing node using a page buffer of a flash memory device is provided to check whether there is coupling effect due to an adjacent sensing node, by reading the potential of the sensing node using the page buffer after changing the potential of the sensing node by inputting two different data to the page buffers connected to adjacent sensing nodes. According to a method for testing a sensing node of a flash memory device including first and second sensing nodes connected to a cell array and first and second page buffers having register(120) and connected to the first and second sensing nodes, respectively, first data is transmitted to the first sensing node through the first page buffer and second data is transmitted to the second sensing node through the second page buffer. The first data is read from the first page buffer through the first sensing node, and the second data is read from the second sensing node. It is judged whether the first input data is the same as the first read data and the second input data is the same as the second read data. It is determined as a normal state without coupling effect if the first and second input data are the same as the first and second read data.
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