发明名称 Procedure for elaboration of sequenced nano-structures e.g. for micro-electronics comprises substrate delivery and attack phases to produce nanometric projections
摘要 <p>#CMT# #/CMT# The procedure for creating sequenced nano-structures consists of providing a substrate (100) with a barrier layer (2) beneath a crystalline film less than one micrometre thick with lattice defects and/or stress fields in a crystalline zone and subjecting it to one or more attack stages. The attack stages expose the barrier layer locally and create projections (7) on a nanometric scale, separated by recesses (7.1) with their bases in the barrier layer to form nano-structures (7, 8). The height of the nano-structures can be increased, if necessary, by engraving the barrier layer, with the projections acting as a mask during this process. #CMT#USE : #/CMT# Creating sequenced nano-structures on a substrate. #CMT#ADVANTAGE : #/CMT# The dimensions and positions of the nano-structures are homogeneous with the scale of the substrate. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawings show an enlarged cross-section of part of the substrate during the formation of the nano-structures. 2 : Barrier layer 5 : Crystalline film 7 : Projections 7.1 : Recessses 8 : Nano-structures 100 : Substrate.</p>
申请公布号 FR2895391(A1) 申请公布日期 2007.06.29
申请号 FR20050054108 申请日期 2005.12.27
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ETABLISSEMENT PUBLIC A CARACTERE INDUSTRIEL ET COMMERCIAL 发明人 FOURNEL FRANK;MORICEAU HUBERT;DEGUET CHRYSTEL
分类号 B82B3/00;H01L21/18;H01L21/306 主分类号 B82B3/00
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