PLASMA PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To achieve a higher sensitivity (higher accuracy) and a long-time continuous stable operation of a monitor for monitoring an etched amount or a remaining quantity of etching of the plane of a workpiece in a plasma processing apparatus. SOLUTION: A transparent end face of a light introduction for detecting wavelengths of the light reflected from the plane of the workpiece 3 and a change in intensity of light of each wavelength is arranged at a distance five times or more the mean free path of gas molecules inside a vacuum container 1 from the plasma boundary. COPYRIGHT: (C)2007,JPO&INPIT