High-frequency semiconductor device

摘要

A semiconductor device operating at a frequency between 0.8 GHz and 300 GHz includes an active region that is positioned on a semi-insulating GaAs substrate; a gate electrode that is positioned in the active region; and a source electrode and a drain electrode that are positioned on the surface of the active region facing each other with the gate electrode positioned between the source electrode and the drain electrode. A drain side active region, which is a part of the active region and positioned between the gate electrode and the drain electrode, increases in width in the direction to the drain electrode from the gate electrode.