发明名称 |
Method for fabricating capacitor in semiconductor device |
摘要 |
A method for fabricating a capacitor in a semiconductor device is provided. The method includes forming an insulation layer over a substrate; flushing a metal source onto the insulation layer to change a characteristic of a surface of the insulation layer to improve adherence of a metal-based material to the surface of the insulation layer; forming a storage node comprising the metal-based material over the flushed insulation layer; and sequentially forming a dielectric layer and a plate electrode over the metal-based storage node.
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申请公布号 |
US2007148897(A1) |
申请公布日期 |
2007.06.28 |
申请号 |
US20060448797 |
申请日期 |
2006.06.08 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
YEOM SEUNG-JIN;KIL DEOK-SIN;KIM JIN-HYOCK;PARK KI-SEON;SONG HAN-SANG;ROH JAE-SUNG |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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