| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device capable of simultaneously obtaining the high integration, high withstand voltage, high speed and easy processing. SOLUTION: This non-volatile semiconductor storage device comprises: a memory cell transistor comprising a floating gate electrode layer on a tunnel insulating film, an inter-gate insulating film, first and second control gate electrode layers and a metal silicide film; a high-voltage transistor comprising a gate electrode layer 51 for high voltage on a gate insulating film 21 for high voltage, an inter-gate insulating film 25 partially opened, first and second control gate electrode layers 48 and 46 and a metal silicide film 53; a low-voltage transistor comprising a floating gate electrode layer 50 on a tunnel insulating film 20, the inter-gate insulating film 25 partially opened, the first and second control gate electrode layers 48 and 46 and the metal silicide film 53; and a liner insulating film 27 directly arranged on a source/drain region of the memory cell transistor, the high-voltage transistor and the low-voltage transistor. COPYRIGHT: (C)2007,JPO&INPIT
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