发明名称 MOLECULAR BEAM EPITAXIAL DEVICE, AND MOLECULAR BEAM EPITAXIAL METHOD
摘要 PROBLEM TO BE SOLVED: To provide an MBE device or the like that can maintain a constant film-formation rate regardless of a film-formation time. SOLUTION: The MBE device 100 is provided with molecular beam generators 10a/10b, vacuum gauges 14a/14b, an atomic absorptive film-formation monitor 8 having a light-source unit 6 and a light-receiving unit 7, and a temperature control calculator 13 for controlling temperatures of the molecular beam generators 10a/10b. The temperature control calculator 13 controls the temperatures of the molecular beam generators 10a/10b, so that a measurement result of the atomic absorptive film-formation monitor 8 becomes the control target value of the atomic absorptive film-formation monitor 8 calculated from a remaining amount of a molecular beam source calculated from measurement results of the vacuum gauges 14a/14b. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007165549(A) 申请公布日期 2007.06.28
申请号 JP20050359252 申请日期 2005.12.13
申请人 SHARP CORP 发明人 SAKAGAMI HIDEKAZU;KISHIMOTO MAKOTO;UNEYAMA KAZUHIRO;SHIMIZU KAZUHISA
分类号 H01L21/203;C23C14/24;C30B23/08 主分类号 H01L21/203
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