| 摘要 |
A light emitting device includes an active region of a multiple-quantum-well layered structure including a plurality of quantum well layers of In<SUB>x</SUB>Ga<SUB>1-x</SUB>As<SUB>y</SUB>P<SUB>1-y</SUB>, where x=0.1 to 1.0, and y=0.0 to 1.0, and a barrier unit including a plurality of first barrier layers alternating with the quantum well layers, and at least one second barrier layer of Al<SUB>u</SUB>Ga<SUB>v</SUB>In<SUB>1-u-v</SUB>As, where u=0.3 to 1.0, and v=0.0 to 0.7.
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