摘要 |
<P>PROBLEM TO BE SOLVED: To easily adjust the formation state of a pattern image with accuracy when switching various illumination conditions and so on. <P>SOLUTION: The exposure method of illuminating a reticle R with exposure light IL and forming a pattern image of the reticle R on a wafer W through a projection optical system PL, comprises a calculation step of calculating moment information corresponding to an integral of the product of a distance from the reference position and an amount of exposure light IL on a plane conjugated to the pupil surface of the projection optical system PL, and an adjustment step of adjusting the formation state of the pattern image, based on the moment information calculated by the calculation step. <P>COPYRIGHT: (C)2007,JPO&INPIT |