PHOTOELECTRIC SURFACE AND PHOTO-DETECTOR

摘要

PROBLEM TO BE SOLVED: To provide a photoelectric surface having a high quantum efficiency and a photo-detector using the photoelectric surface. SOLUTION: The photoelectric surface 10 has a first group III nitride semiconductor layer 8 generating photoelectrons in response to the incidence of ultraviolet rays L. The photoelectric surface 10 further has a second group III nitride semiconductor layer 6 being adjacently formed to the group III nitride semiconductor layer 8, and having an Al composition higher than that of the group III nitride semiconductor layer 8 while being composed of a thin-film crystal having a (c)-axis orientation in the thickness direction. COPYRIGHT: (C)2007,JPO&INPIT