| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that includes a voltage driven type semiconductor element, in which a semiconductor element having whichever characteristics can be driven optimally without having to make adjustments in particular. SOLUTION: In order to detect the time change rate of the amount of electricity varying, depending on the element state due to switching operation, and based on the result of the detection, drive the semiconductor device including the voltage driven type semiconductor element, a drive voltage applied to the gate of the semiconductor element is caused to vary, depending on a plurality of element states during the switching operation of the semiconductor element, and the timings of variations of the element state are set, based on the rate of change of the electricity amount related to the current or the voltage which varies, depending on the variations in the plurality of element states. COPYRIGHT: (C)2007,JPO&INPIT
|
