METHOD FOR PRODUCING INDIUM GARIUM-NITRIDE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing InGaN with a high crystallinity of an InGaN layer while segregation of In is low and a composition ratio of In is enhanced.

SOLUTION: In the method for producing the InGaN layer, under conditions that a growing temperature is 700°C to 790°C, a growing speed is 30 Å/min to 93 Å/min, and a flow rate of trimethyl indium is 1.76×10-5mol/min to 3.53×10-5mol/min, the InGaN layer is grown.

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