| 摘要 |
PROBLEM TO BE SOLVED: To provide a circuit and a method of driving a sub-word line of a semiconductor memory device which achieve reduction in power consumption. SOLUTION: The sub-word line driver is provided with a first transistor, a second transistor, and a third transistor. The first transistor pre-charges a boost node to first voltage in response to a main word line driving signal. The second transistor boosts a boost node to second voltage in response to a sub-word line driving signal, and provides the sub-word line driving signal to a sub-word line. The third transistor provides the main word line driving signal to the sub-word line in response to a third voltage that has a lower level than a logic "high" state of the sub-word line driving signal. COPYRIGHT: (C)2007,JPO&INPIT
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