发明名称 |
SUBSTRATE ISOLATED INTEGRATED HIGH VOLTAGE DIODE INTEGRATED WITHIN A UNIT CELL |
摘要 |
An asymmetric semiconductor device (3) that includes an integrated high voltage diode (72), including: a substrate comprising an epitaxial layer (47) and a deep well implant (42) of a first type patterned above the epitaxial layer; a shallow trench isolation (STI) region (46) separating a cathode from an anode; a first well implant (40) of a second type residing below the anode; and a deep implant mask (34) of the second type patterned above the deep well implant and below both the cathode and a portion of the STI region. |
申请公布号 |
WO2007072304(A2) |
申请公布日期 |
2007.06.28 |
申请号 |
WO2006IB54780 |
申请日期 |
2006.12.12 |
申请人 |
NXP B.V.;LETAVIC, THEODORE, J. |
发明人 |
LETAVIC, THEODORE, J. |
分类号 |
H01L29/861;H01L21/329;H01L29/06;H01L29/40 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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