| 摘要 |
A semiconductor device is provided to improve the latch-up characteristic of a parasitic thyristor by improving the current characteristic between a collector and an emitter. A lateral semiconductor device is composed of a plurality of unit semiconductor devices adjoining each other. A semiconductor region of second conductivity type is formed in a semiconductor substrate of first conductivity type in the unit semiconductor device. A collector layer(4) of first conductivity type is formed in the semiconductor region. A base layer(5) of first conductivity type and a ring type is formed in the semiconductor region, separated from the collector layer by an interval while surrounding the collector layer. An IGBT(insulated gate bipolar transistor) is formed in the base layer, including a first emitter layer(6) of second conductivity type and a ring type. The IGBT controls the transfer of carriers between the first emitter layer and the collector in a channel region formed in the base layer. A second emitter layer(7) of first conductivity type can be formed in the base layer, surrounding the first emitter layer.
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