METHOD FOR FORMING THE GAN TYPE LED DEVICE

摘要

A method for manufacturing a gallium nitride based light emitting diode device is provided to increase the external light emitting efficiency and the quantum efficiency by forming a surface unevenness on an upper surface of a gallium nitride layer through a photolithography process. An n-type gallium nitride layer(230) is formed on a substrate(210). An active layer(240) is formed on the n-type gallium nitride layer. A p-type gallium nitride layer(250) is formed on the active layer. Parts of the p-type gallium nitride layer and the active layer are mesa-etched to expose a part of the n-type gallium nitride layer. An unevenness forming layer is formed on the p-type gallium nitride layer. A photoresist pattern for forming an unevenness pattern is formed on the unevenness forming layer. The unevenness forming layer is selectively wet-etched by using the photoresist pattern as an etching mask to form a surface unevenness(110a) on the p-type gallium nitride layer. A p-type electrode(260) is formed on the p-type gallium nitride layer. An n-type electrode(270) is formed on the exposed n-type gallium nitride layer.