REDUCED-RESISTANCE FINFETS AND METHODS OF MANUFACTURING THE SAME

摘要

A method of manufacturing a finFET including the steps of (1) providing a substrate; and (2) forming at least one source/drain diffusion region of the finFET on the substrate. Each source/drain diffusion region includes (a) an interior region of unsilicided silicon; and (b) silicide formed on a top surface and sidewalls of the region of unsilicided silicon.