| 摘要 |
PROBLEM TO BE SOLVED: To provide stable methods of manufacturing a semiconductor substrate and a semiconductor device capable of preventing deterioration in yield in manufacturing a semiconductor device having an element isolation film and an SOI structure region on a bulk silicon substrate. SOLUTION: A silicon germanium layer 5 and a silicon layer 6 are sequentially formed on a silicon substrate 1 on which the SOI structure region T and a LOCOS film 4 are formed, and a supporter hole 7 is formed on the SOI structure region T. A supporter forming layer 8 is formed thereon, etching is executed using as a photoresist pattern 21 patterned into a shape for protecting the LOCOS film 4 so as to avoid the planar shape of a supporter 8a and the SOI structure region T as a mask, thereby forming the supporter 8a. Then, selective etching is executed for the silicon germanium layer 5 to form a cavity portion G1, and an embedded insulation layer 9 is formed in the cavity portion G1, an insulation layer 10 is formed on the upper part of the silicon layer 6, and then, planarizing processing is performed. Thus, the semiconductor substrate 20 of an SOI substrate is obtained. COPYRIGHT: (C)2007,JPO&INPIT
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