发明名称 LOW DIELECTRIC LOSS SILICON NITRIDE BASED MATERIAL
摘要 <p>A composition having a low dielectric constant and low dielectric loss tangent from room temperature to at least about 1100.degree.C which comprises a silicon nitride based material containing an effective amount of a sintering aid selected from lanthanum oxide, yttrium oxide, lanthanum aluminate, yuttrium aluminate, aluminmum oxide and mixtures thereof and an effective amount of a low dielectric loss promotor selected from the group consisting of iron, chromium and mixtures thereof is a suitable radome material and electromagnetic window material.</p>
申请公布号 CA1273193(A) 申请公布日期 1990.08.28
申请号 CA19860506031 申请日期 1986.04.07
申请人 GTE PRODUCTS CORPORATION 发明人 HSIEH, MARTIN Y.
分类号 C04B35/584;H01B3/12;(IPC1-7):H01B3/12;H01Q1/42;C04B35/58 主分类号 C04B35/584
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