发明名称 Ultra thin seed layer for CPP or TMR structure
摘要 Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.
申请公布号 US2007146928(A1) 申请公布日期 2007.06.28
申请号 US20050317598 申请日期 2005.12.23
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 ZHANG KUNLIANG;WANG HUI-CHUAN;ZHAO TONG;CHEN YU-HSIA;LI MIN;HAN CHERNG-CHYI
分类号 G11B5/127 主分类号 G11B5/127
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