发明名称 |
Ultra thin seed layer for CPP or TMR structure |
摘要 |
Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.
|
申请公布号 |
US2007146928(A1) |
申请公布日期 |
2007.06.28 |
申请号 |
US20050317598 |
申请日期 |
2005.12.23 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
ZHANG KUNLIANG;WANG HUI-CHUAN;ZHAO TONG;CHEN YU-HSIA;LI MIN;HAN CHERNG-CHYI |
分类号 |
G11B5/127 |
主分类号 |
G11B5/127 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|