发明名称 NONVOLATILE MEMORY AND WRITING METHOD THEREOF, AND SEMICONDUCTOR DEVICE
摘要 A write-once memory can be written only once to each memory cell; therefore, a defective bit cannot be detected by an actual inspection of writing. Accordingly, as described above, the measures, in which a redundant circuit is provided and the defective bit is modified before shipping, cannot be taken; thus, it is difficult to provide a memory with few defects. It is an object of the present invention to provide a write-once memory where the probability of a defect is reduced considerably. A nonvolatile memory that can be written only once includes a redundant memory cell, a first circuit which allocates an address to the redundant memory cell, a second circuit which outputs a determination signal that expresses whether writing is performed normally or not, and a third circuit, to which the determination signal is inputted, which controls the first circuit and the second circuit.
申请公布号 US2007147129(A1) 申请公布日期 2007.06.28
申请号 US20060612069 申请日期 2006.12.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KATO KIYOSHI
分类号 G11C11/34 主分类号 G11C11/34
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