发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To restrain an electrical connection between a common electrode and two drain regions from being insufficient. SOLUTION: A complementary semiconductor device (100) is provided with a first conductive transistor, and a second conductive transistor different from the first conductive transistor. When viewing a semiconductor layer (410) from a normal line direction of a main face of the semiconductor layer (410), the first drain region (230) of the first conductive transistor has a protrusion (232) on the second drain region (330) side, and also, the second drain region (330) of the second conductive transistor has a recess (332) on the first drain region (230) side. The common electrode (400) is arranged so as to be at least partially overlapped with the protrusion (232) in the first drain region (230), and at least partially overlapped with the recess (332) in the second drain region (330), respectively. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007165556(A) 申请公布日期 2007.06.28
申请号 JP20050359386 申请日期 2005.12.13
申请人 SHARP CORP 发明人 MORI SHIGEYASU
分类号 H01L29/786;H01L21/20;H01L21/336;H01L21/8238;H01L27/08;H01L27/092 主分类号 H01L29/786
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