发明名称 Semiconductor device and manufacturing method thereof
摘要 An object of the present invention to provide a semiconductor device having a highly functional memory element with improved reliability, and to provide a technique for manufacturing such a highly reliable semiconductor device with a high yield at low cost without complicating an apparatus or a process. As a top view shape of a memory element, a rectangular shape having a projection and a depression on the periphery, a zigzagged shape having one or plural bends, a comb shape, a ring shape having an opening (space) inside, or the like is used. Alternatively, a rectangle with a ratio of a long side to a short side being high, an ellipse with a ratio of a long axis to a short axis being high, or the like can also be used.
申请公布号 US2007147104(A1) 申请公布日期 2007.06.28
申请号 US20060635052 申请日期 2006.12.07
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KATO KIYOSHI;SAITO TOSHIHIKO;TAKANO TAMAE
分类号 G11C11/22 主分类号 G11C11/22
代理机构 代理人
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