METHOD OF FABRICATING NANO SOI WAFER

摘要

A method for fabricating a nano SOI is provided to improve adhesion of wafers by performing a first heat treatment for a predetermined interval of time at a temperature that flake is not generated without an additional process. A bond wafer made of single crystal silicon and a reference wafer are prepared. An insulation layer is formed on at least one surface of the bond wafer. Hydrogen ions are implanted from the surface of the bond wafer to a predetermined depth to form a hydrogen ion implanting part. The insulation layer of the bond wafer and the reference wafer are bonded to each other. A first heat treatment is performed on the bonded wafers at a first temperature for a first time interval, and a second heat treatment is performed at a second temperature higher than the first temperature for a second time interval. The hydrogen ion implanting part of the bond wafer is cleaved. A surface treatment is performed on the cleaved surface of the remaining bond wafer. In the heat treatment, hot air using nitrogen gas is applied in a direction perpendicular to the bonded wafers.