发明名称 Phase shift mask and method for fabricating the same
摘要 A phase shift mask and a method for fabricating the same are provided. The phase shift mask includes: a substrate; a multiple thin layer structure formed over the substrate, the multiple thin layer structure including an opening formed to a predetermined depth; and an absorption material filling a portion of the opening. The method includes: preparing a substrate; forming a multiple thin layer structure over the substrate; etching a portion of the multiple thin layer structure to form an opening; and filling a portion of the opening with an absorption material.
申请公布号 US2007148559(A1) 申请公布日期 2007.06.28
申请号 US20060478180 申请日期 2006.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOO MYOUNG-SUL
分类号 G21K5/00;G03F1/22;G03F1/24;G03F1/26;G03F1/30;G03F7/20;H01L21/027 主分类号 G21K5/00
代理机构 代理人
主权项
地址