| 摘要 |
A method for fabricating a semiconductor device is provided to avoid a film pitting phenomenon by controlling the oxygen quantity of a main etch process to 2~3 sccm while the flowrate of oxygen of a BARC(bottom anti-reflective coating) etch process to a main etch process maintains 4:1 when a via hole is etched by using ArF. An interlayer dielectric is formed on a lower metal interconnection(203) formed on a semiconductor substrate(201). A BARC is formed as a reflection preventing layer on the interlayer dielectric to form a fine pattern. A photoresist is formed on the BARC, and a photoresist pattern is formed by using a mask for forming a pattern. By using the photoresist pattern as a mask, a BARC pattern(211) is formed by a BARC etch process in which the flowrate of oxygen is adjusted to expose the interlayer dielectric. By using the BARC pattern as a mask, a via hole(215) is formed by a main etch process and an over-etch process in which the flowrate of oxygen is adjusted to expose the lower metal interconnection. The flowrate of oxygen of the BARC etch process to the main etch process can maintain 4:1.
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