| 摘要 |
PROBLEM TO BE SOLVED: To improve gettering efficiency and reduce heat treatment time in consideration of the fact that a method of removing impurity elements such as heavy metal, that is gettering technique, is very important to obtain a high-performance device, while reduction of treatment time is required for gettering in respect of throughput. SOLUTION: It is found that impurity elements such as heavy metal segregate at the ridge of a polycrystal semiconductor layer. In order to solve the problem above, the ridge is positively utilized to perform proximity gettering by forming a gettering site. Further, by employing the gettering site using ion doping at the same time, it is possible to remove impurity elements such as heavy metal from a TFT channel forming region and depletion layer in a PN junction to enhance gettering performance and efficiency. COPYRIGHT: (C)2007,JPO&INPIT
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