| 摘要 |
A semiconductor integrated circuit device includes a memory cell array having a plurality of blocks, a storage unit, a block replacement information register group, and a bad block flag register group. The storage unit includes a block replacement information registration area with which it is possible to register block replacement information, and a bad block information registration area with which it is possible to register bad block information. The block replacement information register group is set in accordance with the block replacement information read out of the storage unit during a boot sequence, and the bad block flag register group is set in accordance with both of the block replacement information and the bad block information read out of the storage unit during the boot sequence.
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