| 摘要 |
A method for forming a storage node hole in a semiconductor device is provided to improve an align margin of a storage node and a storage node contact plug by using a hard mask in which an amorphous carbon and a metal layer are stacked. A first insulation layer is formed on a semiconductor substrate(21). A storage node contact plug(23) penetrates the first insulation layer, coming in contact with a predetermined connection of the semiconductor substrate. A second insulation layer is formed on the resultant structure. An amorphous carbon and a metal layer are sequentially formed on the second insulation layer. A photoresist pattern is formed on a predetermined region of the metal layer. The metal layer is etched at a temperature of 40 °C by using the photoresist pattern as a barrier wherein Cl2 or BCl3 is used as main etch gas and N2 or CHF3 is added. The amorphous carbon is etched by using the photoresist pattern and the metal layer as a barrier. The second insulation layer is etched by using the hard mask to form a hole opening the storage node contact plug.
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