Method for ashing the Semicondutor substrate after oxide,申请号KR20040105747-传众专利搜索

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发明名称	Method for ashing the Semicondutor substrate after oxide
摘要
申请公布号	KR100732860(B1)	申请公布日期	2007.06.27
申请号	KR20040105747	申请日期	2004.12.14
申请人		发明人
分类号	H01L21/3065	主分类号	H01L21/3065
代理机构		代理人
主权项
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