| 摘要 |
A method for detecting a plasma damage of an image sensor is provided to compare the optical characteristics of a plurality of photodiodes while differentiating a degree that each photodiode is exposed to electromagnetic wave by forming a damage detecting pattern for differently adjusting the exposure area of an optical path of the plurality of photodiodes. The quantity of electromagnetic wave which is generated in a plasma etch process to be incident upon a plurality of photodiodes(301) is differentiated wherein conductive layers having different exposure areas are formed in the optical path of the photodiodes to differentiate the irradiation quantity of incident electromagnetic wave. The optical characteristic of the photodiode differently damaged according as electromagnetic wave with different quantities is detected. Based upon the irradiation quantity and damage degree of the electromagnetic waves, the damage degree of the photodiode in the plasma etch process is predicted. Based upon the predicted damage degree, the optical characteristic of the photodiode can be corrected.
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