FABRICATION METHOD OF SEMICONDUCTOR DEVICE HAVING DISHING-FREE PLANARIZED LAYER AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME

摘要

A method for manufacturing semiconductor device having a dishing-free planarized layer and a semiconductor device using the same are provided to minimize a process error in a subsequent contact forming process by performing a CMP(Chemical Mechanical Polishing) process on a gap-filling layer using a slurry containing a passivation agent. Patterns are formed on a substrate(101). A gap-filling layer(140), which is a silicon oxidation layer, is formed on the substrate to gap-fill a space between the patterns. A CMP process is performed on the gap-filling layer using a slurry containing a passivation agent below a threshold pressure. The passivation agent is one selected from a group consisting of carboxylic acid or salt thereof, sulfuric ester or salt thereof, sulfonic acid or salt thereof, phosphoric ester or salt thereof, and amine or salt thereof.