| 摘要 |
A method for fabricating an NPN bipolar transistor comprises forming a base layer on a top surface of a substrate. The NPN bipolar transistor may be an NPN silicon-germanium heterojunction bipolar transistor. The method for fabricating the NPN bipolar transistor may further comprise a cap layer situated over the base layer. According to this embodiment, the method for fabricating the NPN bipolar transistor further comprises fabricating an emitter over the base layer, where the emitter defines an intrinsic and an extrinsic base region of the base layer. The emitter may comprise, for example, polycrystalline silicon. The method for fabricating the NPN bipolar transistor further comprises implanting germanium in the extrinsic base region of the base layer so as to make the extrinsic base region substantially amorphous. The method for fabricating the NPN bipolar transistor further comprises implanting boron in the extrinsic base region of the base layer.
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