| 摘要 |
A DMOS(Double Metal Oxide Semiconductor) transistor and a manufacturing method thereof are provided to reduce the size and to decrease on-resistance. A DMOS transistor includes a semiconductor substrate having a first conductive well region(114), a second conductive body within the well region, a first conductive source region(116) in the body, a first conductive drift region(115) and drain region(118) within the cell region except for the body, and a gate electrode(126) between the source and drain regions. The concentration of the drift region is higher than that of the well region. The concentration of the drain region is higher than that of the drift region.
|
